Growth of conductive SrRuO3 films by combining atomic layer deposited SrO and chemical vapor deposited RuO2 layers

Chemistry of Materials

Volumn 24, Issue 24, 2012, Pages 4686-4692

  Han, Jeong Hwan ^a   Lee, Woongkyu ^a   Jeon, Woojin ^a   Lee, Sang Woon ^a   Hwang, Cheol Seong ^a   Ko, Changhee ^b   Gatineau, Julien ^b  

^a Seoul National University   (South Korea)

^b AIR LIQUIDE   (France)

Author keywords

atomic layer deposition; chemical vapor deposition; DRAM; RuO4; Sr(iPr3Cp)2; SrRuO3; SrTiO3

Indexed keywords

AS-DEPOSITED STATE; ATOMIC LAYER DEPOSITED; CHEMICAL VAPOR DEPOSITED; DYNAMIC RANDOM ACCESS MEMORY; HIGH GROWTH RATE; IN-SITU CRYSTALLIZATION; LOW GROWTH TEMPERATURE; POST DEPOSITION ANNEALING; RUO4; SEED LAYER; SEQUENTIAL EXECUTION; SRRUO3; SRTIO; STO FILMS; SUB-CYCLE;

AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; DEPOSITS; DYNAMIC RANDOM ACCESS STORAGE; RUTHENIUM ALLOYS; RUTHENIUM COMPOUNDS; STRONTIUM TITANATES; VAPORS;

FILM GROWTH;

EID: 84871557690     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm302470k     Document Type: Article

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