Study on initial growth behavior of RuO 2 film grown by pulsed chemical vapor deposition: Effects of substrate and reactant feeding time

Chemistry of Materials

Volumn 24, Issue 8, 2012, Pages 1407-1414

  Han, Jeong Hwan ^a   Lee, Sang Woon ^a   Kim, Seong Keun ^a   Han, Sora ^a   Lee, Woongkyu ^a   Hwang, Cheol Seong ^a   Dussarat, Christian ^b   Gatineau, Julien ^b  

^a Seoul National University   (South Korea)

^b AIR LIQUIDE   (France)

Author keywords

initial growth; nucleation; pulsed chemical vapor deposition; RuO 2; RuO 4

Indexed keywords

ATOMIC LAYER DEPOSITED; DEPOSITED FILMS; ELECTRICAL CONDUCTIVITY; FEEDING TIME; GROWTH BEHAVIOR; IONICITIES; METAL ORGANIC PRECURSORS; MIXED GAS; NON-DOPED; NUCLEATION BEHAVIOR; OXYGEN SUPPLYING; REDUCING GAS; RUO 2; RUO 4; RUTILE STRUCTURE; SI SUBSTRATES; SUBSTRATE MATERIAL; THERMAL DECOMPOSITION MECHANISM; THICKNESS DIRECTION; TIO; VARIOUS SUBSTRATES;

ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; CONSUMER BEHAVIOR; DECOMPOSITION; ELECTRIC CONDUCTIVITY; NUCLEATION; OXIDE MINERALS; PLATINUM; RUTHENIUM ALLOYS; RUTHENIUM COMPOUNDS; SILICON; SURFACES; TITANIUM DIOXIDE; TITANIUM NITRIDE; VAPORS;

SUBSTRATES;

EID: 84860137078     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm200989t     Document Type: Article

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