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Volumn 108, Issue 10, 2008, Pages 1215-1219
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Electrostatic force microscopy measurements of charge trapping behavior of Au nanoparticles embedded in metal-insulator-semiconductor structure
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Author keywords
Electrostatic force microscopy; Nanoparticles; Non volatile memory
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Indexed keywords
ADMINISTRATIVE DATA PROCESSING;
CHARGE TRAPPING;
ELECTRIC CONDUCTIVITY;
ELECTROSTATIC DEVICES;
ELECTROSTATIC FORCE;
ELECTROSTATICS;
FETAL MONITORING;
GOLD;
METAL INSULATOR BOUNDARIES;
METALS;
MIS DEVICES;
NANOPARTICLES;
NANOSTRUCTURED MATERIALS;
NANOSTRUCTURES;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR INSULATOR BOUNDARIES;
SEMICONDUCTOR MATERIALS;
SILICON;
SWITCHING CIRCUITS;
AU NANO-PARTICLES;
BIAS-VOLTAGE;
CAPACITANCE-VOLTAGE;
CHARGE TRAPPING CHARACTERISTICS;
CHARGE TRAPPING PROPERTIES;
CURRENT-VOLTAGE MEASUREMENTS;
ELECTRICAL MEASUREMENTS;
ELECTROSTATIC FORCE MICROSCOPY;
LASER IRRADIATIONS;
MEASURED DATA;
METAL-INSULATOR-SEMICONDUCTOR;
METAL-INSULATOR-SEMICONDUCTOR STRUCTURES;
MIS STRUCTURES;
NON-VOLATILE;
NON-VOLATILE MEMORY;
P-TYPE SI;
STORED CHARGE;
CURRENT VOLTAGE CHARACTERISTICS;
GOLD;
METAL;
NANOPARTICLE;
ARTICLE;
ATOMIC FORCE MICROSCOPY;
ELECTRIC CAPACITANCE;
ELECTRIC POTENTIAL;
ELECTRICITY;
ELECTROSTATIC FORCE MICROSCOPY;
LASER;
SEMICONDUCTOR;
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EID: 49949118488
PISSN: 03043991
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ultramic.2008.04.041 Document Type: Article |
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Times cited : (11)
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References (15)
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