Investigation of inversion domains in GaN by electric-force microscopy

Applied Physics Letters

Volumn 78, Issue 17, 2001, Pages 2497-2499

  Jones, K M ^a   Visconti, P ^a,b   Yun, F ^a   Baski, A A ^a   Morkoc H ^a  

^a VIRGINIA COMMONWEALTH UNIVERSITY   (United States)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035938327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1358359     Document Type: Article

References (16)

1. H. Morkoç, Nitride Semiconductors and Devices (Springer, Heidelburg, 1999).
2. S. T. Strite and H. Morkoç, J. Vac. Sci. Technol. B 10, 1237 (1992).
3. O. Ambacher, J. Phys. D 31, 2653 (1998).
4. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999).
5. H. Morkoç, R. Cingolani, and B. Gil, Solid-State Electron. 43, 1909 (1999).
6. H. Tang, W. Kim, A. Botchkarev, G. Popovici, F. Hamdani, and H. Morkoç, Solid-State Electron. 42, 839 (1998).
7. H. Morkoç, R. Cingolani, and B. Gil, Mater. Res. Innovations 3, 97 (1999).
8. Sverdlov, G. A. Martin, H. Morkoç, and D. J. Smith, Appl. Phys. Lett. 67, 2063 (1995).
9. P. M. Bridger, Z. Z. Bandic, E. C. Piquette, and T. C. McGill, Appl. Phys. Lett. 74, 3522 (1999).
10. P. M. Bridger, Z. Z. Bandic, E. C. Piquette, and T. C. McGill, J. Vac. Sci. Technol. B 17, 1750 (1999).
11. Q. Xu and J. W. P. Hsu, J. Appl. Phys. 85, 2465 (1999).
12. M. Nonenmacher, M. P. O'Boyle, and M. K. Wickreamasinghe, Appl. Phys. Lett. 58, 2921 (1991).
13. Digilal Instruments Nanoscope III and Dimension 3110 instruments were used.
14. M. Seelmann-Eggebert, J. L. Weyher, H. Obloh, H. Zimmermann, and A. Rar. Appl. Phys. Lett. 71, 2635 (1991).
15. P. Visconti, K. M. Jones, M. A. Reshchikov, R. Cingolani, H. Morkoç, and R. Molnar, Appl. Phys. Lett. 77, 3532 (2000).
16. D. Sarid, Scanning Force Microscopy (Oxford University Press, New York, 1991).