Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4772-4775

  Jha, Smita ^a   Song, Xueyan ^a   Babcock, S E ^a   Kuech, T F ^b   Wheeler, Dane ^c   Wu, Bin ^c   Fay, P ^c   Seabaugh, Alan ^c  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b University of Wisconsin Madison   (United States)

^c University of Notre Dame   (United States)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. InAs; B1. Silicon; B2. Semiconducting III V materials

Indexed keywords

ANNEALING; CRYSTAL GROWTH; EPITAXIAL GROWTH; FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; INDIUM ARSENIDE; LATTICE MISMATCH; METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPIC EXAMINATION; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SILICON; SINGLE CRYSTALS; SUBSTRATES; VAPORS;

A3. METALORGANIC VAPOR PHASE EPITAXY; ATOMIC FORCES; B1. INAS; B1. SILICON; B2. SEMICONDUCTING III-V MATERIALS; DEVICE APPLICATIONS; GROWTH BEHAVIORS; HIGH RESOLUTIONS; ISLAND FORMATIONS; LARGE LATTICE MISMATCHES; LOW TEMPERATURES; METAL ORGANIC; MOVPE GROWTHS; RAPID NUCLEATIONS; SI SUBSTRATES; SUBSEQUENT ANNEALING; SURFACE MOBILITIES; THIN LAYERS; TRIMETHYL INDIUMS; V/III RATIOS; X-RAY DIFFRACTIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 56249133501     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.048     Document Type: Article

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