InAs nanocrystal growth on Si (100)

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 760-764

  Mano, T ^a   Fujioka, H ^a   Ono, K ^a   Watanabe, Y ^a   Oshima, M ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL GROWTH; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; PHOTOELECTRON SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SYNCHROTRON RADIATION; TRANSMISSION ELECTRON MICROSCOPY;

CROSS SECTION TRANSMISSION ELECTRON MICROSCOPY; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; SYNCHROTRON RADIATION PHOTOELECTRON SPECTROSCOPY (SPRES);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032099789     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00150-0     Document Type: Article

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