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Volumn 323, Issue 1, 2011, Pages 422-425
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Growth of InAs quantum dots and dashes on silicon substrates: Formation and characterization
a
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Author keywords
InAs; Molecular beam epitaxy; Quantum dots and dashes (nanostructures); Semiconducting IIIV materials; Silicon
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Indexed keywords
ATOMIC HYDROGEN;
BEAM EQUIVALENT PRESSURE;
CLEANING METHODS;
DOT SIZE;
EX SITU;
GROWTH CHAMBER;
GROWTH PARAMETERS;
IN-SITU;
IN-SITU CLEANING;
INAS;
INAS QUANTUM DOTS;
LATERAL SIZES;
LOW FLUX;
QUANTUM DASHES;
QUANTUM DOTS AND DASHES (NANOSTRUCTURES);
REFLECTION HIGH ENERGY DIFFRACTION;
SELF-ASSEMBLED;
SEMI CONDUCTING III-V MATERIALS;
SI SUBSTRATES;
SI SURFACES;
SILICON SUBSTRATES;
SILICON SURFACES;
SOLID SOURCE MOLECULAR BEAM EPITAXY;
STRANSKI-KRASTANOV GROWTH MODE;
SURFACE OXIDE;
SURFACE PREPARATION;
TEMPERATURE RANGE;
THERMAL OXIDES;
V/III RATIO;
ATOMS;
EPITAXIAL GROWTH;
HYDROGEN;
INDIUM ARSENIDE;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
SEMICONDUCTING INDIUM;
SEMICONDUCTING SILICON;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR GROWTH;
SURFACE CHEMISTRY;
SURFACE CLEANING;
SURFACES;
THERMAL DESORPTION;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 79957975100
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.11.170 Document Type: Article |
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Times cited : (14)
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References (15)
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