Ordering of nanostressors on free-standing silicon nanomembranes and nanoribbons

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Ritz, C S ^a   Kim Lee, H J ^a   Detert, D M ^a,c   Kelly, M M ^a,d   Flack, F S ^a   Savage, D E ^a   Cai, Z ^b   Evans, P G ^a   Turner, K T ^a   Lagally, M G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c University of California Berkeley   (United States)

^d University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL EXPERIMENTS; CRYSTALLOGRAPHIC ANISOTROPY; DOT SPACING; ELASTIC INTERACTIONS; FINITE-ELEMENT; FINITE-ELEMENT PREDICTIONS; FREE STANDING MEMBRANES; GROWTH MODES; GROWTH OF SELF-ASSEMBLED QUANTUM DOTS; INDUCED STRAIN; LONG RANGE ORDERS; MECHANICAL MODEL; MECHANICS MODELS; MEMBRANE THICKNESS; NANOMEMBRANES; NANORIBBONS; NUCLEATION SITES; SCALE THICKNESS; SYNCHROTRON X RAYS;

EPITAXIAL GROWTH; FINITE ELEMENT METHOD; FORECASTING; MEMBRANES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOSTRUCTURES; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SINGLE CRYSTALS; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 77958611691     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/10/103011     Document Type: Article

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