Combined helium ion beam and nanoimprint lithography attains 4 nm half-pitch dense patterns

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 6, 2012, Pages

  Li, Wen Di ^a,b   Wu, Wei ^a,c   Stanley Williams, Robert ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

^c University of Southern California ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT FABRICATION; DENSE PATTERNS; HELIUM ION BEAMS; HIGH RESOLUTION; HYDROGEN SILSESQUIOXANE; LINE PATTERN; NANO-IMPRINT; NANO-SCALE PATTERNS; NANOIMPRINT PROCESS; NANOTECHNOLOGY RESEARCH; POSSIBLE FUTURES; UV CURABLE;

CURING; ELECTRON BEAM LITHOGRAPHY; ION BEAMS; NANOIMPRINT LITHOGRAPHY; NANOTECHNOLOGY;

IONS;

EID: 84870345529     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4758768     Document Type: Article

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