Effects of vacuum annealing on the optical and electrical properties of p-type copper-oxide thin-film transistors

Semiconductor Science and Technology

Volumn 28, Issue 1, 2013, Pages

  Sohn, Joonsung ^a   Song, Sang Hun ^a   Nam, Dong Woo ^b   Cho, In Tak ^b   Cho, Eou Sik ^c   Lee, Jong Ho ^b   Kwon, Hyuck In ^a  

^a Chung Ang University   (South Korea)

^b Seoul National University   (South Korea)

^c Gachon University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ELECTRICAL PERFORMANCE; GATE VOLTAGES; HIGH CURRENTS; HIGH-TEMPERATURE VACUUM ANNEALING; LOW TEMPERATURES; ON-OFF RATIO; OPTICAL AND ELECTRICAL PROPERTIES; P-TYPE; RF MAGNETRONS; SWITCHING BEHAVIORS; THIN-FILM TRANSISTOR (TFTS); UV-VIS SPECTROSCOPY; VACUUM ANNEALING TEMPERATURE; VACUUM-ANNEALING;

ANNEALING; COPPER; THIN FILM TRANSISTORS; ULTRAVIOLET VISIBLE SPECTROSCOPY; VACUUM; VACUUM TECHNOLOGY; X RAY DIFFRACTION;

ELECTRIC PROPERTIES;

EID: 84870265708     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/1/015005     Document Type: Article

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