SCOPUS 정보 검색 플랫폼

Thin Solid Films

Volumn 525, Issue , 2012, Pages 154-157

Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes

(4) He, Guan Ru a Lin, Yow Jon a Chang, Hsing Cheng b Chen, Ya Hui b

a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

b FENG CHIA UNIVERSITY (Taiwan)

Author keywords

Oxide; Semiconductors; Surface treatment; Thin films

Indexed keywords

ELECTRONIC CONDUCTION; HETEROJUNCTION DIODES; IDEALITY FACTORS; INTERFACE MODIFICATION; INTERFACE PASSIVATION; LOW LEAKAGE; P-TYPE SI; PHOTORESPONSIVITY; RECTIFYING BEHAVIORS; THERMODYNAMICALLY STABLE; ZNO;

DIODES; HETEROJUNCTIONS; OXIDES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SILICON; SURFACE TREATMENT; THIN FILMS; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84870248093 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.10.056 Document Type: Article

Times cited : (11)

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