Chemistry and diffusion processes at the SiOx-AlNy, interface

Surface Science

Volumn 395, Issue 2-3, 1998, Pages 326-341

  Espinos J P ^a   Stabel, A ^a   Gonzalez Elipe A R ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE SEVILLA   (Spain)

Author keywords

Aluminium; Aluminium nitride; Auger parameter; Depth profiling; Reactivity; Silicon oxides; Surface electronic phenomena; Thermal diffusion; X ray photoelectron spectroscopy

Indexed keywords

ALUMINUM; ALUMINUM COMPOUNDS; BINDING ENERGY; DEPOSITION; OXIDATION; REDUCTION; SILICA; SURFACE PHENOMENA; THERMAL DIFFUSION IN SOLIDS; THERMAL EFFECTS; THERMODYNAMIC STABILITY; THIN FILMS;

ALUMINUM NITRIDE; AUGER PARAMETERS;

INTERFACES (MATERIALS);

EID: 0031704860     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00637-7     Document Type: Article

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