Microstructure and electrical properties of (Zr, Sn)TiO 4 thin film deposited on Si(1 0 0) using a sol-gel process

Applied Surface Science

Volumn 253, Issue 4, 2006, Pages 2203-2207

  Yang, Ru Yuan ^a   Su, Yan Kuin ^a   Weng, Min Hang ^b   Ho, Yung Shou ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c FOOYIN UNIVERSITY   (Taiwan)

Author keywords

(Zr, Sn)TiO 4; Electrical properties; Microstructure; Sol gel; Thin film

Indexed keywords

ANNEALING; COMPOSITION; CRYSTALLINE MATERIALS; DEPOSITION; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MICROSTRUCTURE; SILICON; SOL-GELS; TRANSMISSION ELECTRON MICROSCOPY;

(ZR, SN)TIO4; ELECTRICAL PROPERTIES; FLAT-BAND VOLTAGE; POLYCRYSTALLINE ZIRCONIUM TIN TITANATE;

THIN FILMS;

EID: 33751378585     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.04.022     Document Type: Article

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