Hetero-interface modification in thin film ZnO/Si solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 000390-000393

  Mersich, Peter T ^a   Yen, Tingfang ^a   Anderson, Wayne A ^a  

^a the State University of New York   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASE LAYERS; ECR-CVD; ELECTRON CYCLOTRON RESONANCE CHEMICAL VAPOR DEPOSITION; FILL FACTOR; HETERO INTERFACES; HETEROJUNCTION SOLAR CELLS; HETEROSTRUCTURES; INTERFACE DEFECTS; LOW COST APPLICATIONS; METAL-INDUCED GROWTHS; PHOTORESPONSES; SI LAYER; SI PHOTODIODES; SPECTRAL RESPONSE; ZNO/P-SI;

CHEMICAL VAPOR DEPOSITION; CYCLOTRONS; ELECTRON CYCLOTRON RESONANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; MICROCRYSTALLINE SILICON; SEMICONDUCTOR DIODES; SOLAR CELLS; THIN FILM DEVICES; THIN FILMS;

FILM GROWTH;

EID: 77951573918     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411656     Document Type: Conference Paper

References (6)

1. S. Hegedus, "Thin film solar modules: the low cost, high throughput, and versatile alternative to Si wafers," Prog. Photovoltaics 14, 2006, pp. 393-411.
2. J.K. Rath, "Low temperature polycrystalline silicon: a review on deposition, physical properties and solar cell applications," Sol. Energy Mater. Sol. Cells 76 (4), 2003, pp. 431-487.
3. C.H. Ji, W.A. Anderson, "Metal-induced grown Si nanostructures for large-area-device applications," IEEE Trans. Electron Devices 50 (9), 2003, pp. 1885-1889.
4. J.H. Choi, D.Y. Kim, S. S. Kim, S.J. Park, J. Jang, "Polycrystalline silicon prepared by metal induced crystallization," Thin Solid Films 440 (1-2), 2003, pp. 1-4.
5. W.W. Wenas, S. Riyadi, "Carrier transport in high-efficiency ZnO/SiO2/Si solar cells," Sol. Energy Mater. Sol. Cells, 90, 2006, pp. 3261-3267. (Pubitemid 44332108)
6. J.Y. Lee, Y.S. Choi, J.H. Kim, M.O. Park, S. Im, "Optimizing n-ZnO/p-Si heterojunctions for photodiode applications," Thin Solid Films 403, 2002, pp. 553-557.