Design of an interfacial layer to block chemical reaction for epitaxial ZnO growth on a Si substrate

Crystal Growth and Design

Volumn 11, Issue 6, 2011, Pages 2438-2443

  Yu, Hak Ki ^a   Baik, Jeong Min ^b   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Ulsan National Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL RELATIONS; HIGH CRYSTALLINITY; INTERFACIAL LAYER; INTERFACIAL REACTIONS; MGO BUFFER LAYER; OPTICAL PERFORMANCE; SI SUBSTRATES; SI(111) SUBSTRATE; THERMODYNAMICALLY STABLE; ZNO; ZNO FILMS;

BUFFER LAYERS; EPITAXIAL GROWTH; FILM GROWTH; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; METALLIC FILMS; SILICON; SUBSTRATES; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79958010048     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg200203s     Document Type: Article

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