Molecular beam epitaxial growth of hexagonal ZnMgO films on Si(1 1 1) substrates using thin MgO buffer layer

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 293-298

  Fujita, Miki ^a   Sasajima, Masanori ^a   Deesirapipat, Yuparwadee ^a   Horikoshi, Yoshiji ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

A1. Crystal structure; A2. Single crystal growth; A3. Molecular beam epitaxy; B1. Alloy; B1. Oxides; B2. Semiconducting II VI materials

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; INDUCTIVELY COUPLED PLASMA; MAGNESIA; MICROCRACKS; MOLECULAR BEAM EPITAXY; OXIDES; PHASE SEPARATION; PULSED LASER DEPOSITION; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYERS; SEMICONDUCTING II-VI MATERIALS; SINGLE CRYSTAL GROWTH; WIDE-BAND-GAP SEMICONDUCTORS;

ZINC ALLOYS;

EID: 18444380301     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.022     Document Type: Conference Paper

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