Effect of thermal annealing on the optical and electronic properties of ZnO thin films grown on p-Si substrates

Applied Surface Science

Volumn 245, Issue 1-4, 2005, Pages 384-390

  Han, W G ^a   Kang, S G ^a   Kim, T W ^a   Kim, D W ^b   Cho, W J ^b  

^a Hanyang University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Electronic properties; Optical properties; Thermal annealing; ZnO p Si

Indexed keywords

CRYSTAL STRUCTURE; FILM GROWTH; MAGNETRON SPUTTERING; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SILICON; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

CRYSTALLINITY; THERMAL ANNEALING; WIDE GAP SEMICONDUCTORS; ZNO/P-SI;

THIN FILMS;

EID: 17044385797     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.10.033     Document Type: Article

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