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Applied Physics A: Materials Science and Processing

Volumn 109, Issue 3, 2012, Pages 635-641

Transmission electron microscopy investigation of crystalline silicon surface irradiated by femtosecond laser pulses in different background atmospheres

(7) Wen, C a Yang, H D a Li, X H a Cui, Y X b He, X Q b Duan, X F b Li, Z H c

a SOUTHWEST UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

b INSTITUTE OF PHYSICS (China)

c INSTITUTE OF HIGH ENERGY PHYSICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; CHEMICAL ETCHING; CHEMICAL PRODUCTS; CLOSE PROXIMITY; COMPOSITIONAL CHARACTERISTICS; CONICAL MICROSTRUCTURES; CRYSTALLINE GRAINS; CRYSTALLINE SILICON SURFACES; CRYSTALLINE SILICONS; DOMINANT MECHANISM; ELEMENTAL SULFUR; INTERACTION MECHANISMS; IRRADIATION PROCESS; LASER-ASSISTED; MICROCONES; OUTER LAYER; OXIDATION EFFECTS; REACTIVE GAS; SILICON CRYSTALLINE GRAINS; SILICON SURFACES; SURFACE MICROSTRUCTURES; TRANSMISSION ELECTRON MICROSCOPY OBSERVATION;

CRYSTALLINE MATERIALS; ETCHING; LASER ABLATION; LASERS; MICROSTRUCTURE; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SULFUR; SULFUR HEXAFLUORIDE; SURFACE DEFECTS; TRANSMISSION ELECTRON MICROSCOPY; ULTRASHORT PULSES; VACUUM;

AMORPHOUS SILICON;

EID: 84870240861 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-012-7082-4 Document Type: Article

Times cited : (11)

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