Properties of ultrafast laser textured silicon for photovoltaics

Solar Energy Materials and Solar Cells

Volumn 95, Issue 10, 2011, Pages 2745-2751

  Iyengar, Vikram V ^a   Nayak, Barada K ^a   More, Karren L ^b   Meyer III, Harry M ^b   Biegalski, Michael D ^b   Li, Jian V ^c   Gupta, Mool C ^a  

^a UNIVERSITY OF VIRGINIA   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Defects; Light trapping; Solar cells; Ultrafast laser processing

Indexed keywords

CHEMICAL ETCHING; COMPOSITIONAL CHANGES; COMPOSITIONAL MAPPING; COMPREHENSIVE STUDIES; DEFECT ANALYSIS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GAIN INSIGHT; IMPURITY INCORPORATION; LASER INDUCED; LIGHT TRAPPING; NONHOMOGENEITY; PHOTOVOLTAIC DEVICES; PHOTOVOLTAICS; SILICON SURFACES; STRAINED SILICON; THERMAL-ANNEALING; ULTRAFAST LASER PROCESSING;

CRYSTAL IMPURITIES; CRYSTAL STRUCTURE; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DEPTH PROFILING; FOURIER TRANSFORMS; NANOSTRUCTURED MATERIALS; PHOTOELECTRON SPECTROSCOPY; PHOTOVOLTAIC EFFECTS; SPECTRUM ANALYSIS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAFAST LASERS; X RAY PHOTOELECTRON SPECTROSCOPY; X RAY SPECTROSCOPY;

ULTRAFAST PHENOMENA;

EID: 79960559485     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2011.04.011     Document Type: Article

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