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Volumn 396, Issue 5, 2010, Pages 1905-1911
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High-resolution investigations of ripple structures formed by femtosecond laser irradiation of silicon
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Author keywords
Amorphous silicon; Electron microscopy; Laser ablation; Ripple structure
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Indexed keywords
ABLATION THRESHOLDS;
CRYSTALLINE AND AMORPHOUS SILICON;
CRYSTALLINE PHASIS;
FEMTOSECOND LASER IRRADIATION;
HIGH RESOLUTION;
MULTI-SHOT IRRADIATION;
PERIODIC MICROSTRUCTURE;
RIPPLE STRUCTURE;
SELF-ORGANIZED;
SEM;
SI(1 0 0);
SINGLE SHOTS;
STRUCTURAL INVESTIGATION;
STRUCTURAL MODIFICATIONS;
TARGET SURFACE;
ATOMIC FORCE MICROSCOPY;
CHEMICAL MODIFICATION;
COMPLEXATION;
CRYSTAL ATOMIC STRUCTURE;
CRYSTALLINE MATERIALS;
ELECTRONS;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
IRRADIATION;
LASER ABLATION;
PULSED LASER APPLICATIONS;
SCANNING ELECTRON MICROSCOPY;
ULTRASHORT PULSES;
AMORPHOUS SILICON;
SILICON;
ARTICLE;
ATOMIC FORCE MICROSCOPY;
CHEMICAL STRUCTURE;
CHEMISTRY;
LASER;
PARTICLE SIZE;
SURFACE PROPERTY;
TIME;
LASERS;
MICROSCOPY, ATOMIC FORCE;
MOLECULAR STRUCTURE;
PARTICLE SIZE;
SILICON;
SURFACE PROPERTIES;
TIME FACTORS;
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EID: 77949264209
PISSN: 16182642
EISSN: 16182650
Source Type: Journal
DOI: 10.1007/s00216-009-3342-3 Document Type: Article |
Times cited : (75)
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References (28)
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