Microstructuring and doping of silicon with nanosecond laser pulses

Applied Surface Science

Volumn 258, Issue 20, 2012, Pages 8002-8007

  Li, Xiaohong ^a   Chang, Liyang ^a   Qiu, Rong ^a   Wen, Cai ^a   Li, Zhihui ^b   Hu, Sifu ^a  

^a SOUTHWEST UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b INSTITUTE OF HIGH ENERGY PHYSICS   (China)

Author keywords

Doping; Electronic properties; Microstructuring; Nanosecond laser pulse; Optical properties; Silicon

Indexed keywords

DOPING (ADDITIVES); ELECTRONIC PROPERTIES; HALL MOBILITY; LASER PULSES; MICROSTRUCTURE; NEODYMIUM COMPOUNDS; OPTICAL PROPERTIES; SILICON; SURFACE PROPERTIES; YTTRIUM ALUMINUM GARNET;

DISORDERED SURFACES; IRRADIATED SILICONS; LASER-PULSE ENERGY; MICRO STRUCTURING; MICROSTRUCTURED SILICONS; NANOSECOND LASER PULSE; OPTICAL AND ELECTRONIC PROPERTIES; OPTOELECTRONIC APPLICATIONS;

NEODYMIUM LASERS;

EID: 84862541001     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.04.155     Document Type: Article

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