Formation of colorized silicon by femtosecond laser pulses in different background gases

Applied Physics A: Materials Science and Processing

Volumn 104, Issue 2, 2011, Pages 749-753

  Yang, Hong Dao ^a   Li, Xiao Hong ^a   Li, Guo Qiang ^a   Wen, Cai ^a   Qiu, Rong ^a   Huang, Wen Hao ^b   Wang, Jun Bo ^a  

^a SOUTHWEST UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; BACKGROUND GAS; ENERGY DENSITY; FOCUSED FEMTOSECOND LASERS; IN-VACUUM; OPTICAL REFLECTION; PHYSICAL MECHANISM; SINGLE CRYSTAL SILICON; TRANSLATION STAGE; WAFER SURFACE;

NITROGEN; OPTICAL SYSTEMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SURFACE STRUCTURE; ULTRAFAST LASERS; VACUUM;

ULTRASHORT PULSES;

EID: 80052446075     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-011-6340-1     Document Type: Article

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