Device modeling at cryogenic temperatures: Effects of incomplete ionization

IEEE Transactions on Electron Devices

Volumn 54, Issue 11, 2007, Pages 2984-2990

  Akturk, Akin ^a,b   Allnutt, Jeffrey ^c   Dilli, Zeynep ^a   Goldsman, Neil ^a,b   Peckerar, Martin ^a  

^a UNIVERSITY OF MARYLAND   (United States)

^b CoolCAD Electronics ^*  (United States)

^c LOCKHEED MARTIN   (United States)

Author keywords

Cryogenic temperatures; Device modeling; Incomplete ionization

Indexed keywords

ACTIVATION ENERGY; CRYOGENICS; IONIZATION; POISSON EQUATION;

DEVICE MODELING; INCOMPLETE IONIZATION;

MOSFET DEVICES;

EID: 36249031553     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.906966     Document Type: Article

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