Temperature influences on FinFETs with undoped body

ECS Transactions

Volumn 6, Issue 4, 2007, Pages 211-216

  Pavanello, M A ^a,b   Martino, J A ^b   Simoen, E ^c   Rooyackers, R ^c   Collaert, N ^c   Claeys, C ^c,d  

^a CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; FINFET; TEMPERATURE DISTRIBUTION; THRESHOLD VOLTAGE; TITANIUM NITRIDE;

FULLY DEPLETED SOI; LOWER TEMPERATURES; MOBILITY DEGRADATION; SERIES RESISTANCES; SUBTHRESHOLD SLOPE; TEMPERATURE DEPENDENCE; TEMPERATURE INFLUENCE; THRESHOLD VOLTAGE VARIATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 45249124730     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2728863     Document Type: Conference Paper

References (8)

1. J. Park and J.-P. Colinge, IEEE Trans on Electron Devices, 49, 2222 (2002).
2. N. Collaert et al., in Symposium on VLSI Technology Digest of Technical Papers, 108 (2005).
3. D. Lederer et al., Solid-State Electronics, 49, 1488 (2005).
4. P. Francis et al., in IEEE Trans. on Electron Devices, 41, 715 (1994).
5. V. Kilchytska et al., in EUROSOI 2007 Conference Proceedings, 30 (2007).
6. J.-P. Colinge et al., IEEE Electron Device Lett, 27, 120 (2006).
7. T. Rudenko et al., Microelectronic Engineering 80, 386 (2005)
8. A. Dixit et al., IEEE Trans. on Electron Devices, 52, 1132 (2005).