High-temperature performance of silicon junctionless MOSFETs

IEEE Transactions on Electron Devices

Volumn 57, Issue 3, 2010, Pages 620-625

  Lee, Chi Woo ^a   Borne, Adrien ^b   Ferain, Isabelle ^a   Afzalian, Aryan ^a   Yan, Ran ^a   Dehdashti Akhavan, Nima ^a   Razavi, Pedram ^a   Colinge, Jean Pierre ^a  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b Grenoble INP Phelma   (France)

Author keywords

High temperature; Junctionless (JL) FET; Multiple gate MOSFET; Silicon nanowire FET

Indexed keywords

ACCUMULATION MODES; ELECTRICAL PARAMETER; HIGH TEMPERATURE; HIGH TEMPERATURE PERFORMANCE; MOSFETS; MULTIPLE-GATE MOSFET; OFF CURRENT; SILICON NANOWIRE FETS; SILICON NANOWIRE TRANSISTORS; SILICON NANOWIRES; TEMPERATURE DEPENDENCE; TRIGATE; VARIATION OF PARAMETERS;

CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRIC WIRE; FIELD EFFECT TRANSISTORS; MESFET DEVICES; MOSFET DEVICES; NANOWIRES; THRESHOLD VOLTAGE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77649181039     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2039093     Document Type: Article

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