Numerical investigation on the junctionless nanowire FET

Solid-State Electronics

Volumn 71, Issue , 2012, Pages 13-18

  Gnani, E ^a   Gnudi, A ^a   Reggiani, S ^a   Baccarani, G ^a   Shen, N ^b   Singh, N ^b   Lo, G Q ^b   Kwong, D L ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Depletion mode FET; Junctionless field effect transistor (JL FET); Nanowire field effect transistor (NW FET)

Indexed keywords

CYLINDRICAL GEOMETRY; DEPLETION-MODE FET; ELECTROSTATIC POTENTIALS; FUTURE TECHNOLOGIES; I-V AND C-V CHARACTERISTICS; JUNCTIONLESS; NANOWIRE FET; NUMERICAL INVESTIGATIONS; NUMERICAL RESULTS; TURN-ON CHARACTERISTICS;

COMPUTER SIMULATION; CYLINDERS (SHAPES); ELECTRIC PROPERTIES; NANOWIRES;

MESFET DEVICES;

EID: 84858707995     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.10.013     Document Type: Conference Paper

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