Determination of gate-bias dependent source/drain series resistance and effective channel length for advanced MOS devices

Solid-State Electronics

Volumn 50, Issue 11-12, 2006, Pages 1774-1779

  Ho, C S ^a   Lo, Y C ^b   Chang, Y H ^b   Liou, Juin J ^c  

^a ProMOS Technologies Inc   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c University of Central Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; MOSFET DEVICES;

ADVANCED MOS DEVICES; DRAIN SERIES RESISTANCES; DRAM TECHNOLOGIES; GATE BIAS DEPENDENT SOURCE;

MOS DEVICES;

EID: 33751225406     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.09.005     Document Type: Article

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