Electrical characteristics of 20-nm junctionless Si nanowire transistors

Solid-State Electronics

Volumn 73, Issue , 2012, Pages 7-10

  Park, Chan Hoon ^a   Ko, Myung Dong ^a   Kim, Ki Hyun ^a   Baek, Rock Hyun ^a   Sohn, Chang Woo ^a   Baek, Chang Ki ^a   Park, Sooyoung ^a   Deen, M J ^a,c   Jeong, Yoon Ha ^a,b   Lee, Jeong Soo ^a,b  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b National Center for Nanomaterials Technology (NCNT)   (South Korea)

^c MCMASTER UNIVERSITY   (Canada)

Author keywords

Drain induced barrier lowering; Junctionless transistor; Multigate; Nanowire transistor; Short channel characteristics; Subthreshold slope

Indexed keywords

MULTIPLE-GATE FIELD-EFFECT TRANSISTORS; NANOWIRES;

DRAIN-INDUCED BARRIER LOWERING; JUNCTIONLESS TRANSISTORS; MULTIGATE; NANOWIRE TRANSISTORS; SHORT CHANNELS; SUBTHRESHOLD SLOPE;

TRANSISTORS;

EID: 84859374749     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.11.032     Document Type: Letter

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