Low resistivity p-type Zn1-xAlxO:Cu2O composite transparent conducting oxide thin film fabricated by sol-gel method

Materials Research Bulletin

Volumn 48, Issue 1, 2013, Pages 96-100

  Hui, K N ^a   Hui, K S ^b   Li, Lei ^a   Cho, Y R ^a   Singh, Jai ^a  

^a Pusan National University   (South Korea)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

A. Semiconductors; A. Thin films; B. Chemical synthesis; D. Electrical properties; D. Optical properties

Indexed keywords

CHEMICAL SYNTHESIS; CONDUCTING OXIDES; COST EFFECTIVE; FORMING GAS; GLASS SUBSTRATES; I-V MEASUREMENTS; IV CHARACTERISTICS; LOW RESISTIVITY; LOW TEMPERATURES; P-N JUNCTION; P-TYPE; P-TYPE CONDUCTIVITY; POLYCRYSTALLINE; POST ANNEALING; TRANSPARENT CONDUCTING OXIDE THIN FILMS;

ELECTRIC PROPERTIES; OXIDE FILMS; SEMICONDUCTOR JUNCTIONS; SOL-GEL PROCESS; SUBSTRATES; X RAY DIFFRACTION; ZINC;

COPPER;

EID: 84869499641     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2012.10.013     Document Type: Article

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