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Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4846-4849

Fabrication of low-resistive p-type Al-N co-doped zinc oxide thin films by RF reactive magnetron sputtering

(4) Lu, Hsin Chun a Lu, Jo Ling a Lai, Chi You a Wu, Gwo Mei a

a CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

AZO; p Type; Reactive sputtering; Thin film

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; AZO; CO-DOPED; CO-DOPED ZNO; ELECTRICAL AND STRUCTURAL PROPERTIES; GLASS SUBSTRATES; P-TYPE; REACTIVE GAS; RF REACTIVE MAGNETRON SPUTTERING; VOLUME RATIO; WORKING GAS; ZNO;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; MAGNETRONS; METALLIC FILMS; OPTICAL FILMS; OXIDE FILMS; THIN FILM DEVICES; THIN FILMS; ZINC; ZINC OXIDE;

ALUMINUM;

EID: 74349116700 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2009.08.170 Document Type: Article

Times cited : (20)

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