Studies of N-doped p-ZnO layers grown on c-sapphire by radical source molecular beam epitaxy

Journal of the Korean Physical Society

Volumn 53, Issue 5 PART 2, 2008, Pages 3016-3020

  Ivanov, S V ^a   El Shaer, A ^a   Al Suleiman, M ^a   Bakin, A ^a   Waag, A ^a   Lyublinskaya, O G ^b   Shmidt, N M ^b   Listoshin, S B ^b   Kyutt, R N ^b   Ratnikov, V V ^b   Terentyev, A Ya ^b   Ber, B Ya ^b   Komissarova, T A ^c   Ryabova, L I ^c   Khokhlov, D R ^c  

^a TECHNICAL UNIVERSITY OF BRAUNSCHWEIG   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

^c MOSCOW STATE UNIVERSITY   (Russian Federation)

Author keywords

Molecular beam epitaxy; Nitrogen; p doping; Plasma activated oxygen; ZnO layers

Indexed keywords

EID: 57349186210     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: 10.3938/jkps.53.3016     Document Type: Conference Paper

References (5)

1. Y. Marfain and A. Lusson, Superlat. & Microstr. 38, 385 (2005).
2. B. Pecz, A. El-Shaer, A. Bakin, A.-C. Mofor, A. Waag and J. Stoemenos, J. Appl. Phys. 100, 103506 (2006).
3. S. V. Ivanov, A. El-Shaer, T. V. Shubina, S. B. Listoshin, A. Bakin and A. Waag, Phys. Stat. Sol. (c), 4, 154 (2007).
4. V. V. Ratnikov, R. N. Kyutt, T. V. Shubina, T. Paskova and B. Monemar, J. Phys. D.: Appl. Phys. 34, A30 (2001).
5. S. Limpijumnong, X. Li, S.-H. Wei and S. B. Zhang, Appl. Phys. Lett. 86, 211910 (2005).