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Volumn 19, Issue 5, 2009, Pages 1152-1158

Characterization of ZnO:Ga and ZnO:N films prepared by PLD

(9) Gorbatenko, L S a Novodvorsky, O A a Panchenko, V Ya a Khramova, O D a Cherebilo, Ye A a Lotin, A A a Wenzel, C b Trumpaicka, N b Bartha, J W b

a INSTITUTE ON LASER AND INFORMATION TECHNOLOGIES (Russian Federation)

b DRESDEN UNIVERSITY OF TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER GAS; CO-DOPED; CONCENTRATION OF; EMISSION LINES; GA FILM; GALLIUM DOPING; NITROGEN-DOPING; P TYPE ZNO; PHOTOLUMINESCENCE SPECTRUM; PULSE LASER DEPOSITION; SPECIFIC RESISTANCES; ZNO; ZNO FILMS;

DOPING (ADDITIVES); EMISSION SPECTROSCOPY; GALLIUM NITRIDE; METALLIC FILMS; OXIDE FILMS; PHOTOLUMINESCENCE; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC OXIDE;

EPITAXIAL FILMS;

EID: 66149102487 PISSN: 1054660X EISSN: 15556611 Source Type: Journal
DOI: 10.1134/S1054660X09050454 Document Type: Article

Times cited : (13)

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