Growth of amorphous SiC film on Si by means of ion beam induced mixing

Applied Surface Science

Volumn 263, Issue , 2012, Pages 367-372

  Barna, Árpád ^a   Gurban, Sandor ^a   Kotis, László ^a   Lábár, János ^a   Sulyok, Attila ^a   Tóth, Attila L ^a   Menyhárd, Miklós ^a   Kovac, Janez ^b   Panjan, Peter ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

Amorphous SiC; Compound formation by FIB; Defect mediated compound formation; Ion damage; Ion mixing; SiC coating

Indexed keywords

AMORPHOUS FILMS; AUGER ELECTRON SPECTROSCOPY; C (PROGRAMMING LANGUAGE); DEPTH PROFILING; FILM GROWTH; FILM PREPARATION; FILM THICKNESS; FOCUSED ION BEAMS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BOMBARDMENT; IONS; MIXING; MULTILAYERS; SILICON; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SIC; COMPOUND FORMATION; DEFECT MEDIATED COMPOUND FORMATIONS; ION DAMAGE; ION MIXING; SIC COATINGS;

AMORPHOUS SILICON;

EID: 84869499396     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.09.063     Document Type: Article

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