Thickness effect on the formation of SiC nanoparticles in sandwiched Si/C/Si and C/Si multilayers

Thin Solid Films

Volumn 517, Issue 20, 2009, Pages 5867-5871

  Chung, C K ^a   Wu, B H ^a   Chen, T S ^a   Peng, C C ^a   Lai, C W ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

Amorphous silicon; Ion beam sputtering; Multilayer; Nanoparticles; SiC

Indexed keywords

A-DENSITY; AMORPHOUS SILICON (A-SI); ANNEALING TEMPERATURES; HIGHER TEMPERATURES; ION BEAM SPUTTERING; KINETIC VIEWPOINT; LAYER NUMBER; PARTICLE DENSITIES; SI (100) SUBSTRATE; SIC; SIC FORMATION; SIC NANOPARTICLES; THERMALLY ACTIVATED; THICKNESS EFFECT; THIN STRUCTURE; THREE-LAYER; THREE-LAYER STRUCTURES; TWO LAYERS; TWO-LAYER STRUCTURES; ULTRA-HIGH-VACUUM ION BEAM SPUTTERING; VACUUM THERMAL ANNEALING;

ACTIVATION ENERGY; AMORPHOUS CARBON; ION BEAMS; IONS; MULTILAYERS; NANOPARTICLES; SILICON CARBIDE; SOLIDS; SPUTTERING; VACUUM;

AMORPHOUS SILICON;

EID: 67349087538     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.226     Document Type: Article

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