Activation energy of the growth of ion-beam-synthesized nano-crystalline 3C-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 257, Issue 1-2 SPEC. ISS., 2007, Pages 195-198

  Intarasiri, S ^a   Dangtip, S ^b   Hallen A ^c   Jensen, J ^d   Yu, L D ^a   Possnert, G ^d   Singkarat, S ^a  

^a CHIANG MAI UNIVERSITY   (Thailand)

^b Mahidol University   (Thailand)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^d UPPSALA UNIVERSITY   (Sweden)

Author keywords

Activation energy; Glancing incidence X ray diffraction (GIXRD); Ion beam synthesis (IBS); Silicon; Silicon carbide (SiC)

Indexed keywords

ACTIVATION ENERGY; ANNEALING; GRAIN SIZE AND SHAPE; GROWTH (MATERIALS); ION BEAM ASSISTED DEPOSITION; SILICON CARBIDE; X RAY DIFFRACTION ANALYSIS;

GLANCING INCIDENCE X RAY DIFFRACTION (GIXRD); ION BEAM SYNTHESIS (IBS); SUBSTRATE TEMPERATURE;

NANOCRYSTALLINE SILICON;

EID: 33947691532     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.01.022     Document Type: Article

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