Ion beam induced solid state reaction in Si/C layer systems

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 214-219

  Harbsmeier, F ^a   Bolse, W ^a,b   Flank, A M ^c  

^a UNIVERSITY OF GÖTTINGEN   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c SYNCHROTRON SOLEIL   (France)

Author keywords

Ion beam mixing; SiC; X ray absorption spectroscopy

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CRYSTALLINE MATERIALS; ION BEAM ASSISTED DEPOSITION; MIXING; THERMAL EFFECTS; X RAY SPECTROSCOPY;

ION BEAM MIXING; ION IRRADIATION; X RAY ABSORPTION SPECTROSCOPY;

SILICON CARBIDE;

EID: 0035333147     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00461-4     Document Type: Conference Paper

References (19)