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Volumn 2, Issue , 2012, Pages

Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells

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EID: 84869202193     PISSN: None     EISSN: 20452322     Source Type: Journal    
DOI: 10.1038/srep00816     Document Type: Article
Times cited : (107)

References (53)
  • 1
    • 79551708214 scopus 로고    scopus 로고
    • Advances in group III-nitride-based deep UV light-emitting diode technology
    • Kneissl, M. et al. Advances in group III-nitride-based deep UV light-emitting diode technology. Semiconductor Science and Technology 26, 014036 (2011).
    • (2011) Semiconductor Science and Technology , vol.26 , pp. 014036
    • Kneissl, M.1
  • 3
    • 33745627020 scopus 로고    scopus 로고
    • An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
    • DOI 10.1038/nature04760, PII NATURE04760
    • Taniyasu, Y., Kasu, M. & Makimoto, T. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres. Nature 441, 325-328 (2006). (Pubitemid 44050193)
    • (2006) Nature , vol.441 , Issue.7091 , pp. 325-328
    • Taniyasu, Y.1    Kasu, M.2    Makimoto, T.3
  • 4
    • 65249102153 scopus 로고    scopus 로고
    • Efficiency of light emission in high aluminum content AlGaN quantum wells
    • Shatalov, M. et al. Efficiency of light emission in high aluminum content AlGaN quantum wells. Journal of Applied Physics 105, 073103 (2009).
    • (2009) Journal of Applied Physics , vol.105 , pp. 073103
    • Shatalov, M.1
  • 5
    • 38749146896 scopus 로고    scopus 로고
    • Ultraviolet light-emitting diodes based on group three nitrides
    • Khan, A. Ultraviolet light-emitting diodes based on group three nitrides. Nature photonics 2, 77-84 (2008).
    • (2008) Nature Photonics , vol.2 , pp. 77-84
    • Khan, A.1
  • 6
    • 2542504577 scopus 로고    scopus 로고
    • Room-temperature direct current operation of 290 nm lightemitting diodes with milliwatt power levels
    • Fischer, a. J. et al. Room-temperature direct current operation of 290 nm lightemitting diodes with milliwatt power levels. Applied Physics Letters 84, 3394 (2004).
    • (2004) Applied Physics Letters , vol.84 , pp. 3394
    • Fischer, A.J.1
  • 7
    • 34548439882 scopus 로고    scopus 로고
    • Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes
    • Arif, R. a., Ee, Y.-K. & Tansu, N. Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes. Applied Physics Letters 91, 091110 (2007).
    • (2007) Applied Physics Letters , vol.91 , pp. 091110
    • Arif, R.A.1    Ee, Y.-K.2    Tansu, N.3
  • 10
    • 79959907003 scopus 로고    scopus 로고
    • Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
    • Zhao, H., Liu, G., Zhang, J., Poplawsky, J. D., Dierolf, V. & Tansu, N. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. Optics express 19 Suppl 4, A991-A1007 (2011).
    • (2011) Optics Express , vol.19 , Issue.SUPPL. 4
    • Zhao, H.1    Liu, G.2    Zhang, J.3    Poplawsky, J.D.4    Dierolf, V.5    Tansu, N.6
  • 11
    • 64349114715 scopus 로고    scopus 로고
    • Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures
    • Liu, D.-S. et al. Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures. Applied Physics Letters 94, 143502 (2009).
    • (2009) Applied Physics Letters , vol.94 , pp. 143502
    • Liu, D.-S.1
  • 12
    • 1542315187 scopus 로고    scopus 로고
    • Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
    • Fujii, T. et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Applied Physics Letters 84, 855 (2004).
    • (2004) Applied Physics Letters , vol.84 , pp. 855
    • Fujii, T.1
  • 13
    • 20844462044 scopus 로고    scopus 로고
    • Nitride deep-ultraviolet light-emitting diodes with microlens array
    • Khizar, M., Fan, Z. Y., Kim, K. H., Lin, J. Y. & Jiang, H. X. Nitride deep-ultraviolet light-emitting diodes with microlens array. Applied Physics Letters 86, 173504 (2005).
    • (2005) Applied Physics Letters , vol.86 , pp. 173504
    • Khizar, M.1    Fan, Z.Y.2    Kim, K.H.3    Lin, J.Y.4    Jiang, H.X.5
  • 14
    • 1242329865 scopus 로고    scopus 로고
    • III-nitride blue and ultraviolet photonic crystal light emitting diodes
    • Oder, T. N., Kim, K. H., Lin, J. Y. & Jiang, H. X. III-nitride blue and ultraviolet photonic crystal light emitting diodes. Applied Physics Letters 84, 466 (2004).
    • (2004) Applied Physics Letters , vol.84 , pp. 466
    • Oder, T.N.1    Kim, K.H.2    Lin, J.Y.3    Jiang, H.X.4
  • 15
    • 3142776253 scopus 로고    scopus 로고
    • Unique optical properties of AlGaN alloys and related ultraviolet emitters
    • Nam, K. B., Li, J., Nakarmi, M. L., Lin, J. Y.&Jiang, H. X. Unique optical properties of AlGaN alloys and related ultraviolet emitters. Applied Physics Letters 84, 5264 (2004).
    • (2004) Applied Physics Letters , vol.84 , pp. 5264
    • Nam, K.B.1    Li, J.2    Nakarmi, M.L.3    Lin, J.Y.4    Jiang, H.X.5
  • 16
    • 21544461610 scopus 로고
    • Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
    • Morkoc, H. et al. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies. Journal of Applied Physics 76, 1363-1398 (1994).
    • (1994) Journal of Applied Physics , vol.76 , pp. 1363-1398
    • Morkoc, H.1
  • 17
    • 33747831672 scopus 로고    scopus 로고
    • Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region
    • Kawanishi, H., Senuma, M., Yamamoto, M., Niikura, E. & Nukui, T. Extremely weak surface emission from (0001) c-plane AlGaN multiple quantum well structure in deep-ultraviolet spectral region. Applied Physics Letters 89, 081121 (2006).
    • (2006) Applied Physics Letters , vol.89 , pp. 081121
    • Kawanishi, H.1    Senuma, M.2    Yamamoto, M.3    Niikura, E.4    Nukui, T.5
  • 18
    • 77956848619 scopus 로고    scopus 로고
    • Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
    • Zhang, J., Zhao, H. & Tansu, N. Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers. Applied Physics Letters 97, 111105 (2010).
    • (2010) Applied Physics Letters , vol.97 , pp. 111105
    • Zhang, J.1    Zhao, H.2    Tansu, N.3
  • 19
    • 84862909976 scopus 로고    scopus 로고
    • Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes
    • Kolbe, T. et al. Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes. Applied Physics Letters 99, 261105 (2011).
    • (2011) Applied Physics Letters , vol.99 , pp. 261105
    • Kolbe, T.1
  • 20
    • 79955704450 scopus 로고    scopus 로고
    • Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid-and deep-ultraviolet spectral regimes
    • Zhang, J., Zhao, H. & Tansu, N. Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid-and deep-ultraviolet spectral regimes. Applied Physics Letters 98, 171111 (2011).
    • (2011) Applied Physics Letters , vol.98 , pp. 171111
    • Zhang, J.1    Zhao, H.2    Tansu, N.3
  • 21
    • 84555197242 scopus 로고    scopus 로고
    • Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices
    • Taniyasu, Y. & Kasu, M. Polarization property of deep-ultraviolet light emission from C-plane AlN/GaN short-period superlattices. Applied Physics Letters 99, 251112 (2011).
    • (2011) Applied Physics Letters , vol.99 , pp. 251112
    • Taniyasu, Y.1    Kasu, M.2
  • 22
    • 3242684501 scopus 로고    scopus 로고
    • Enhanced light extraction in IIInitride ultraviolet photonic crystal light-emitting diodes
    • Shakya, J., Kim, K. H., Lin, J. Y. & Jiang, H. X. Enhanced light extraction in IIInitride ultraviolet photonic crystal light-emitting diodes. Applied Physics Letters 85, 142 (2004).
    • (2004) Applied Physics Letters , vol.85 , pp. 142
    • Shakya, J.1    Kim, K.H.2    Lin, J.Y.3    Jiang, H.X.4
  • 24
    • 0037455349 scopus 로고    scopus 로고
    • Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
    • Bell, a. et al. Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire. Applied Physics Letters 82, 349 (2003).
    • (2003) Applied Physics Letters , vol.82 , pp. 349
    • Bell, A.1
  • 26
    • 34547657400 scopus 로고    scopus 로고
    • Single-step fabrication of Fresnel microlens array on sapphire substrate of flip-chip gallium nitride light emitting diode by focused ion beam
    • Lee, M. & Kuo, K. Single-step fabrication of Fresnel microlens array on sapphire substrate of flip-chip gallium nitride light emitting diode by focused ion beam. Applied Physics Letters 91, 051111 (2007).
    • (2007) Applied Physics Letters , vol.91 , pp. 051111
    • Lee, M.1    Kuo, K.2
  • 27
    • 79959596937 scopus 로고    scopus 로고
    • Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals
    • Matioli, E. et al. Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals. Applied Physics Letters 98, 251112 (2011).
    • (2011) Applied Physics Letters , vol.98 , pp. 251112
    • Matioli, E.1
  • 28
    • 61449233978 scopus 로고    scopus 로고
    • III-nitride photonic-crystal light-emitting diodes with high extraction efficiency
    • Wierer, J. J., David, A.&Megens, M. M. III-nitride photonic-crystal light-emitting diodes with high extraction efficiency. Nature Photonics 3, 163-169 (2009).
    • (2009) Nature Photonics , vol.3 , pp. 163-169
    • Wierer, J.J.1    David, A.2    Megens, M.M.3
  • 29
    • 79958038567 scopus 로고    scopus 로고
    • Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios
    • Kumnorkaew, P., Gilchrist, J. F. & Tansu, N. Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios. IEEE Photonics Journal 3, 489-499 (2011).
    • (2011) IEEE Photonics Journal , vol.3 , pp. 489-499
    • Kumnorkaew, P.1    Gilchrist, J.F.2    Tansu, N.3
  • 30
    • 36549056017 scopus 로고    scopus 로고
    • Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays
    • Ee, Y.-K., Arif, R. a., Tansu, N., Kumnorkaew, P. & Gilchrist, J. F. Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays. Applied Physics Letters 91, 221107 (2007).
    • (2007) Applied Physics Letters , vol.91 , pp. 221107
    • Ee, Y.-K.1    Arif, R.A.2    Tansu, N.3    Kumnorkaew, P.4    Gilchrist, J.F.5
  • 31
    • 0001141291 scopus 로고    scopus 로고
    • High extraction efficiency of spontaneous emission from slabs of photonic crystals
    • Fan, S., Villeneuve, P., Joannopoulos, J. & Schubert, E. High Extraction Efficiency of Spontaneous Emission from Slabs of Photonic Crystals. Physical Review Letters 78, 3294-3297 (1997). (Pubitemid 127657345)
    • (1997) Physical Review Letters , vol.78 , Issue.17 , pp. 3294-3297
    • Fan, S.1    Villeneuve, P.R.2    Joannopoulos, J.D.3    Schubert, E.F.4
  • 32
    • 79952086228 scopus 로고    scopus 로고
    • Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes
    • Rangel, E., Matioli, E., Choi, Y.-S., Weisbuch, C., Speck, J. S. & Hu, E. L. Directionality control through selective excitation of low-order guided modes in thin-film InGaN photonic crystal light-emitting diodes. Applied Physics Letters 98, 081104 (2011).
    • (2011) Applied Physics Letters , vol.98 , pp. 081104
    • Rangel, E.1    Matioli, E.2    Choi, Y.-S.3    Weisbuch, C.4    Speck, J.S.5    Hu, E.L.6
  • 33
    • 84862005500 scopus 로고    scopus 로고
    • Light extraction of organic light emitting diodes by defective hexagonal-close-packed array
    • Koo, W. H., Youn, W., Zhu, P., Li, X.-H., Tansu, N. & So, F. Light Extraction of Organic Light Emitting Diodes by Defective Hexagonal-Close-Packed Array. Advanced Functional Materials 22, 3454-3459 (2012).
    • (2012) Advanced Functional Materials , vol.22 , pp. 3454-3459
    • Koo, W.H.1    Youn, W.2    Zhu, P.3    Li, X.-H.4    Tansu, N.5    So, F.6
  • 35
    • 51349141733 scopus 로고    scopus 로고
    • Enhancement in middleultraviolet emission in a surface-plasmon-assisted coaxial nanocavity
    • Zhuang, Q., Feng, X., Yang, Z., Kang, J. & Yuan, X. Enhancement in middleultraviolet emission in a surface-plasmon-assisted coaxial nanocavity. Applied Physics Letters 93, 091902 (2008).
    • (2008) Applied Physics Letters , vol.93 , pp. 091902
    • Zhuang, Q.1    Feng, X.2    Yang, Z.3    Kang, J.4    Yuan, X.5
  • 36
    • 77955199637 scopus 로고    scopus 로고
    • Nanoscale optics: Plasmonics gets transformed
    • Cai, W. & Brongersma, M. L. Nanoscale optics: Plasmonics gets transformed. Nature nanotechnology 5, 485-486 (2010).
    • (2010) Nature Nanotechnology , vol.5 , pp. 485-486
    • Cai, W.1    Brongersma, M.L.2
  • 37
    • 4444260457 scopus 로고    scopus 로고
    • Surface-plasmon-enhanced light emitters based on InGaN quantum wells
    • Okamoto, K. et al. Surface-plasmon-enhanced light emitters based on InGaN quantum wells. Nature materials 3, 601 (2004).
    • (2004) Nature Materials , vol.3 , pp. 601
    • Okamoto, K.1
  • 38
    • 79952967306 scopus 로고    scopus 로고
    • Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes
    • Zhao, H., Zhang, J., Liu, G. & Tansu, N. Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes. Applied Physics Letters 98, 151115 (2011).
    • (2011) Applied Physics Letters , vol.98 , pp. 151115
    • Zhao, H.1    Zhang, J.2    Liu, G.3    Tansu, N.4
  • 39
    • 83655202909 scopus 로고    scopus 로고
    • Enhancement of green emission from ingan/gan multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array
    • Lu, C.-H., Lan, C.-C., Lai, Y.-L., Li, Y.-L. & Liu, C.-P. Enhancement of Green Emission from InGaN/GaN Multiple Quantum Wells via Coupling to Surface Plasmons in a Two-Dimensional Silver Array. Advanced Functional Materials 21, 4719-4723 (2011).
    • (2011) Advanced Functional Materials , vol.21 , pp. 4719-4723
    • Lu, C.-H.1    Lan, C.-C.2    Lai, Y.-L.3    Li, Y.-L.4    Liu, C.-P.5
  • 40
    • 0012669301 scopus 로고    scopus 로고
    • Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling
    • Neogi, A. et al. Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling. Physical Review B 66, 153305 (2002).
    • (2002) Physical Review B , vol.66 , pp. 153305
    • Neogi, A.1
  • 41
    • 24144470510 scopus 로고    scopus 로고
    • Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy
    • Okamoto, K. et al. Surface plasmon enhanced spontaneous emission rate of InGaN/GaN quantum wells probed by time-resolved photoluminescence spectroscopy. Applied Physics Letters 87, 071102 (2005).
    • (2005) Applied Physics Letters , vol.87 , pp. 071102
    • Okamoto, K.1
  • 42
    • 52649108669 scopus 로고    scopus 로고
    • Localized surface plasmon resonance spectroscopy of triangular aluminum nanoparticles
    • Chan, G. H., Zhao, J., Schatz, G. C. & Duyne, R. P. V. Localized Surface Plasmon Resonance Spectroscopy of Triangular Aluminum Nanoparticles. Journal of Physical Chemistry C 112, 13958-13963 (2008).
    • (2008) Journal of Physical Chemistry C , vol.112 , pp. 13958-13963
    • Chan, G.H.1    Zhao, J.2    Schatz, G.C.3    Duyne, R.P.V.4
  • 43
    • 75749114850 scopus 로고    scopus 로고
    • Enhanced fluorescence by surface plasmon coupling of Au nanoparticles in an organic electroluminescence diode
    • Fujiki, a. et al. Enhanced fluorescence by surface plasmon coupling of Au nanoparticles in an organic electroluminescence diode. Applied Physics Letters 96, 043307 (2010).
    • (2010) Applied Physics Letters , vol.96 , pp. 043307
    • Fujiki, A.1
  • 44
    • 80855128098 scopus 로고    scopus 로고
    • Solid state photovoltaic cells based on localized surface plasmon-induced charge separation
    • Takahashi, Y. & Tatsuma, T. Solid state photovoltaic cells based on localized surface plasmon-induced charge separation. Applied Physics Letters 99, 182110 (2011).
    • (2011) Applied Physics Letters , vol.99 , pp. 182110
    • Takahashi, Y.1    Tatsuma, T.2
  • 45
    • 35548953755 scopus 로고    scopus 로고
    • Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode
    • Yeh, D., Huang, C., Chen, C., Lu, Y. & Yang, C. C. Surface plasmon coupling effect in an InGaN/GaN single-quantum-well light-emitting diode. Applied Physics Letters 91, 171103 (2007).
    • (2007) Applied Physics Letters , vol.91 , pp. 171103
    • Yeh, D.1    Huang, C.2    Chen, C.3    Lu, Y.4    Yang, C.C.5
  • 46
    • 0037011603 scopus 로고    scopus 로고
    • Emission through one of two metal electrodes of an organic light-emitting diode via surface-plasmon cross coupling
    • Gifford, D. K. & Hall, D. G. Emission through one of two metal electrodes of an organic light-emitting diode via surface-plasmon cross coupling. Applied Physics Letters 81, 4315 (2002).
    • (2002) Applied Physics Letters , vol.81 , pp. 4315
    • Gifford, D.K.1    Hall, D.G.2
  • 47
    • 79959911368 scopus 로고    scopus 로고
    • Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode
    • Kuo, Y. et al. Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode. Optics express 19 Suppl 4, A914-A929 (2011).
    • (2011) Optics Express , vol.19 , Issue.SUPPL. 4
    • Kuo, Y.1
  • 48
    • 33645337908 scopus 로고    scopus 로고
    • Surface plasmon-polariton length scales: A route to sub-wavelength optics
    • Barnes, W. L. Surface plasmon-polariton length scales: a route to sub-wavelength optics. Journal of Optics A: Pure and Applied Optics 8, S87-S93 (2006).
    • (2006) Journal of Optics A: Pure and Applied Optics , vol.8
    • Barnes, W.L.1
  • 49
    • 78149442160 scopus 로고    scopus 로고
    • Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes
    • Kolbe, T. et al. Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes. Applied Physics Letters 97, 171105 (2010).
    • (2010) Applied Physics Letters , vol.97 , pp. 171105
    • Kolbe, T.1
  • 50
    • 33746608147 scopus 로고    scopus 로고
    • Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (l<240) AlGaNmultiple- quantum-well lasers
    • Kawanishi, H., Senuma, M. & Nukui, T. Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (l
    • (2006) Applied Physics Letters , vol.89 , pp. 041126
    • Kawanishi, H.1    Senuma, M.2    Nukui, T.3
  • 53
    • 0037434206 scopus 로고    scopus 로고
    • Time-resolved electroluminescence of AlGaN-based lightemitting diodes with emission at 285 nm
    • Shatalov, M. et al. Time-resolved electroluminescence of AlGaN-based lightemitting diodes with emission at 285 nm. Applied Physics Letters 82, 167 (2003).
    • (2003) Applied Physics Letters , vol.82 , pp. 167
    • Shatalov, M.1


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