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Volumn 99, Issue 26, 2011, Pages

Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes

(10) Kolbe, Tim a Knauer, Arne b Chua, Chris c Yang, Zhihong c Kueller, Viola b Einfeldt, Sven b Vogt, Patrick a Johnson, Noble M c Weyers, Markus b Kneissl, Michael a,b

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK (Germany)

c PALO ALTO RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; EFFECT OF TEMPERATURE; EMISSION WAVELENGTH; IN-PLANE; NEAR-ULTRAVIOLET LIGHT-EMITTING DIODE; POLARIZED EMISSIONS; STRAIN DEPENDENCE; ULTRAVIOLET LIGHT EMITTING DIODES; ULTRAVIOLET SPECTRAL RANGE;

ALUMINUM; DIODES; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT POLARIZATION; POLARIZATION; SEMICONDUCTOR QUANTUM WELLS; ULTRAVIOLET RADIATION;

TENSILE STRAIN;

EID: 84862909976 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3672209 Document Type: Article

Times cited : (33)

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