Surface plasmon enhanced spontaneous emission rate of InGaNGaN quantum wells probed by time-resolved photoluminescence spectroscopy

Applied Physics Letters

Volumn 87, Issue 7, 2005, Pages

  Okamoto, Koichi ^a   Niki, Isamu ^a   Scherer, Axel ^a   Narukawa, Yukio ^b   Mukai, Takashi ^b   Kawakami, Yoichi ^c  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b NICHIA CORPORATION   (Japan)

^c KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON VIBRATIONS; EMISSION RATES; FLUOROSCENT TUBES; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

HETEROJUNCTIONS; LIGHT EMITTING DIODES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION;

SURFACE PLASMON RESONANCE;

EID: 24144470510     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2010602     Document Type: Article

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