Light-extraction enhancement in GaN-based light-emitting diodes using grade-refractive-index amorphous titanium oxide films with porous structures

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Liu, Day Shan ^a   Lin, Tan Wei ^a   Huang, Bing Wen ^a   Juang, Fuh Shyang ^a   Lei, Po Hsun ^a   Hu, Chen Ze ^b  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b Chilin Technology Co Ltd   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS TITANIUM OXIDES; DEPOSITED FILMS; DEPOSITION TEMPERATURES; FRESNEL TRANSMISSIONS; GAN-BASED LIGHT-EMITTING DIODES; LIGHT EXTRACTIONS; LIGHT-EXTRACTION EFFICIENCIES; PHOTOCATALYTIC EFFECTS; PHOTOCATALYTIC PROPERTIES; POROUS STRUCTURES; UV-LIGHT IRRADIATIONS;

CURRENT DENSITY; ELECTRODEPOSITION; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; LIGHT EMITTING DIODES; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDE FILMS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM; TITANIUM; TITANIUM OXIDES;

AMORPHOUS FILMS;

EID: 64349114715     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3116613     Document Type: Article

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