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Volumn 298, Issue SPEC. ISS, 2007, Pages 341-344
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Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers
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Author keywords
A1. Atomic force micrograph; A1. Rutherford backscattering spectroscopy; A3. Metalorganic chemical vapor deposition; B1. AlInGaN Quaternary alloys
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Indexed keywords
ATOMIC FORCE MICROSCOPY;
CRYSTAL STRUCTURE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
RUTHERFORD BACKSCATTERING SPECTROSCOPY;
SEMICONDUCTING ALUMINUM COMPOUNDS;
ATOMIC FORCE MICROGRAPHS;
CRYSTALLINE QUALITY;
QUATERNARY ALLOYS;
QUATERNARY EPILAYERS;
EPITAXIAL GROWTH;
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EID: 33846438620
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jcrysgro.2006.10.150 Document Type: Article |
Times cited : (9)
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References (15)
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