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Volumn 62, Issue 1, 2011, Pages 142-145

Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Author keywords

AlInGaN; Light emitting diodes; Metalorganic vapor phase epitaxy; Polarization; Quaternary

Indexed keywords

ACTIVE LAYER; ALINGAN; BARRIER LAYERS; CURRENT INJECTIONS; FORWARD VOLTAGE; INDUCED POLARIZATION; METALORGANIC VAPOR PHASE EPITAXY; MOLE FRACTION; NEAR ULTRAVIOLET; OPTOELECTRONIC CHARACTERISTICS; OUTPUT POWER; QUANTUM BARRIERS; QUATERNARY; WAVELENGTH SHIFT;

EID: 79957929474     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.04.018     Document Type: Article
Times cited : (4)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.