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Volumn 16, Issue 3, 2009, Pages 371-374
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AlInGaN 310 nm ultraviolet metal-insulator-semiconductor sensors with photo-chemical-vapor-deposition SiO2 cap layers
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Author keywords
AlGaN; MIS; Sensor; Ultraviolet
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Indexed keywords
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EID: 67149097688
PISSN: 13406000
EISSN: 13499432
Source Type: Journal
DOI: 10.1007/s10043-009-0070-z Document Type: Article |
Times cited : (9)
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References (25)
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