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Volumn 101, Issue 17, 2012, Pages

Fe-doped InN layers grown by molecular beam epitaxy

(15) Wang, Xinqiang a Liu, Shitao a Ma, Dingyu a Zheng, Xiantong a Chen, Guang a Xu, Fujun a Tang, Ning a Shen, Bo a Zhang, Peng b Cao, Xingzhong b Wang, Baoyi b Huang, Sen c Chen, Kevin J c Zhou, Shengqiang d Yoshikawa, Akihiko e

a PEKING UNIVERSITY (China)

b INSTITUTE OF HIGH ENERGY PHYSICS (China)

c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

d INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

e CHIBA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CONCENTRATION; ELECTRON GENERATION; FE DOPING; FE-DOPED; HIGH DENSITY; INN LAYERS; MOBILITY REDUCTION; N-TYPE DOPING; SEMI-INSULATING PROPERTIES;

GALLIUM NITRIDE; HYDROGEN; MOLECULAR BEAM EPITAXY;

EPITAXIAL GROWTH;

EID: 84868034404 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4764013 Document Type: Article

Times cited : (4)

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