Electrical properties of GaN (Fe) buffers for AlGaNGaN high electron mobility transistor structures

Applied Physics Letters

Volumn 92, Issue 4, 2008, Pages

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Yugova, T G ^a   Markov, A V ^a   Dabiran, A M ^b   Wowchak, A M ^b   Cui, B ^b   Xie, J ^b   Osinsky, A V ^b   Chow, P P ^b   Pearton, S J ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b SVT ASSOCIATES   (United States)

^c J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; FERMI LEVEL; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS;

ADMITTANCE SPECTRA; THINNER BUFFERS;

THICK FILMS;

EID: 38849107035     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2838734     Document Type: Article

References (15)

1. M. S. Shur, M. A. Khan, in GaN and Related Materials II, edited by, S. J. Pearton, (Gordon and Breach, New York, 1999), pp. 47-92.
2. H. Miyamoto, Phys. Status Solidi C ZZZZZZ 1610-1634 3, 2254 (2006).
3. A. E. Wickenden, D. D. Koleske, R. L. Henry, M. E. Twigg, and M. Fatemi, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2003.08.024 260, 54 (2004).
4. S. Muller, K. Kohler, R. Kiefer, Q. Quay, M. Baeumler, and L. Kirste, Phys. Status Solidi C ZZZZZZ 1610-1634 2, 2639 (2005).
5. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. A. Shlensky, and S. J. Pearton, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1697616 95, 5591 (2004).
6. Z. Bougria, M. Azize, P. Lorenzini, M. Laught, and H. Haas, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.200460417 202, 536 (2005).
7. S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1490396 81, 439 (2002).
8. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, V. I. Vdovin, A. V. Markov, A. A. Shlensky, K. R. Evans, D. Hanser, J. M. Zavada, and S. J. Pearton, J. Vac. Sci. Technol. B JVTBD9 1071-1023 10.1116/1.2718962 25, 686 (2007).
9. R. P. Vaudo, X. P. Xu, A. Salant, J. Malcarne, and G. R. Brandes, Phys. Status Solidi A PSSABA 0031-8965 10.1002/pssa.200303273 200, 18 (2003).
10. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, T. G. Yugova, E. A. Petrova, A. M. Dabiran, A. M. Wowchak, A. V. Osinski, P. P. Chow, S. J. Pearton, K. D. Shcherbatchev, and V. T. Bublik, J. Electrochem. Soc. JESOAN 0013-4651 10.1149/1.2749094 154, H749 (2007).
11. Y.-F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, IEEE Electron Device Lett. EDLEDZ 0741-3106 10.1109/LED.2003.822667 25, 117 (2004).
12. R. S. Balmer, D. E. J. Soley, A. J. Simons, J. D. Mace, L. Koker, P. O. Jackson, D. J. Wallis, M. J. Uren, and T. Martin, Phys. Status Solidi C ZZZZZZ 1610-1634 3, 1429 (2006).
13. D. L. Losee, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.321865 46, 2204 (1975).
14. A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, M. Shin, M. Skowronski, and D. W. Greve, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.368149 84, 870 (1998).
15. D. C. Look, Z.-Q. Fang, and B. Claffin, J. Cryst. Growth JCRGAE 0022-0248 10.1016/j.jcrysgro.2005.03.035 281, 143 (2005).