High vertical breakdown strength in with low specific on-resistance AlGaN/AlN/GaN HEMTs on silicon

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 1, 2011, Pages 37-39

  Arulkumaran, S ^a   Vicknesh, S ^a,b   Ng, G I ^b   Liu, Z H ^a,b   Selvaraj, S L ^c   Egawa, T ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AlGaN; Breakdown strength; Device characteristics; GaN; HEMTs; On resistance; Transistors

Indexed keywords

ALGAN; BREAKDOWN STRENGTHS; DEVICE CHARACTERISTICS; GAN; HEMTS; ON-RESISTANCE;

ELECTRIC BREAKDOWN; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON; SUBSTRATES; TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 78651070538     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004465     Document Type: Article

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