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Volumn 57, Issue 12, 2010, Pages 3333-3339

Limitations of field plate effect due to the silicon substrate in AlGaN/GaN/AlGaN DHFETs

Author keywords

Breakdown voltage; field plate (FP); GaN double heterostructures field effect transistor (DHFET); silicon substrate

Indexed keywords

BREAKDOWN VOLTAGE; DOUBLE HETEROSTRUCTURES; ELECTRIC FIELD DISTRIBUTIONS; FIELD PLATE (FP); FIELD PLATES; GATE DRAIN; LEAKAGE PATHS; METAL CONTACTS; SILICON INTERFACE; SILICON SUBSTRATE; SILICON SUBSTRATES;

EID: 78650019756     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2076130     Document Type: Article
Times cited : (27)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.