AlGaN/GaN HEMTs with low leakage current and high on/off current ratio

IEEE Electron Device Letters

Volumn 31, Issue 2, 2010, Pages 102-104

  Lin, Yu Syuan ^a   Lain, Yi Wei ^a   Hsu, Shawn S H ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Flicker noise; GaN; HEMTs; Leakage current

Indexed keywords

ALGAN/GAN HEMTS; DRAIN LEAKAGE CURRENT; FLICKER NOISE; GAN; GAN HEMTS; GATE-LEAKAGE CURRENT; ISOLATION STRUCTURES; LOW-LEAKAGE CURRENT; ON/OFF CURRENT RATIO; POST-GATE ANNEALING;

DRAIN CURRENT; GALLIUM ALLOYS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; SPURIOUS SIGNAL NOISE;

LEAKAGE CURRENTS;

EID: 75749115078     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2036576     Document Type: Article

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