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Applied Physics Letters

Volumn 98, Issue 24, 2011, Pages

Nitrided SrTiO3 as charge-trapping layer for nonvolatile memory applications

(4) Huang, X D a Lai, P T a Liu, L b Xu, J P b

a UNIVERSITY OF HONG KONG (Hong Kong)

b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE LOSS; DEEP LEVEL; MEMORY WINDOW; NITRIDED; NITROGEN INCORPORATION; NON-VOLATILE MEMORY APPLICATION; RETENTION PROPERTIES; SRTIO;

CAPACITORS; CHARGE TRAPPING; NITROGEN; PASSIVATION; PHOTOELECTRON SPECTROSCOPY; SILICATES; STRONTIUM TITANATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

STRONTIUM ALLOYS;

EID: 79960569965 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3601473 Document Type: Article

Times cited : (16)

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