Electrical characterization of metal-oxide-high-k dielectric-oxide-semiconductor (MOHOS) structures for memory applications

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 606-609

  Hsu, Hsin hao ^a   Lee, Joseph Ya min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; POLYSILICON; SILICA; SILICON NITRIDE;

CHARGE STORAGE LAYERS; MEMORY WINDOWS; NON VOLATILE MEMORY DEVICES;

MOS CAPACITORS;

EID: 34247172547     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.027     Document Type: Article

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